摘要
数值模拟技术已经成为分析和优化工业化晶体生长工艺必不可少的工具。本文利用有限元分析软件计算了300mm直拉硅单晶生长过程中,不同液面位置时的晶体固液界面形状,模拟计算考虑了热传导、辐射、气流等物理现象,分析了晶体长度和液面位置对晶体生长界面形状的影响,得出了随着晶体长度的增加固液界面的凸度会增大的规律。
Numerical simulation technique has silicon crystal growth technology, a finite elem different melt height during Ф300 mm Si crystal been an useful tool for the analysis and optimization of ent software is used to calculate the interface shape with growth. Phenomenal as thermal conduction, radiation and gas flow are considered and the contribution of crystal length and melt level to the crystal interface shape are all analyzed. It is concluded that the interface crown increases as crystal length increasing.
作者
王学锋
高宇
戴小林
吴志强
张国虎
周旗钢
Wang, Xue-Feng[1,2]; Gao, Yu[1,2]; Dai, Xiao-Lin[1]; Wu, Zhi-Qiang[1]; Zhang, Guo-Hu[1]; Zhou, Qi-Gang[1]
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第6期1571-1574,共4页
Journal of Synthetic Crystals
基金
国际科技合作重点项目计划(No.2007DFC50310)
关键词
直拉硅单晶
固液界面
液面位置
数值模拟
CZ silicon single crystal
solid and liquid interface
melt level
simulation
