摘要
绝缘栅双极型晶体管(IGBT)模块在实际工况中会受到周期性的交变电、热、机械力等多种应力作用,极易导致焊料层空洞的快速融合、生长,造成焊料层分层脱落和失效。通过进行焊料层多物理场耦合建模仿真和老化试验,研究了芯片焊料层空洞大小、位置以及分布对模块结温和应力的影响;进而,提出了老化过程中焊料层空洞的生长模型,分析了模块热特性随空洞生长过程的变化规律;然后,通过研究反映空洞热阻的Cauer热网络模型及其参数提取方法,提出了利用模块热阻增加率评估焊料层空洞生长程度的方法。结果表明:在生长初期(空洞率≤5%),焊料层中心空洞对热阻、芯片结温的影响大于边缘空洞,对应力的影响则相反;在生长后期,芯片焊层空洞率大于30%、直接敷铜(DBC)衬底焊料层空洞率大于40%,不同生长模型的影响基本一致。最后通过功率循环老化、超声波检测以及结温测试,验证了结论。
Insulated gate bipolar transistor(IGBT) module is subjected to cyclic alternating electric, thermal, mechanical forces and other stresses in actual operating condition, which easily leads to the rapid fusion and growth of the solder layer voids, and causes the solder layer to fall off and fail. Through the multi-physics field coupling modeling simulation and aging test of the solder layer, the influences of size, location and distribution of the voids in the chip solder layer on the junction temperature and stress of the module are studied in this paper. Furthermore, the growth model of the solder layer void during the aging process is proposed, the variation law of the thermal characteristics of the module in the void growth process is analyzed. Then, through studying the Cauer thermal network model that reflects the thermal resistance of the void and its parameter extraction method, a method for evaluating the growth degree of voids in the solder layer using the thermal resistance increasing rate of the module is proposed. The results show that in the early growth stage(the void rate is less than 5%) the influence of the center void in the solder layer on the thermal resistance and chip junction temperature is greater than that of the edge void, and the influence on the stress is opposite. In the later growth stage, in which the chip solder layer void rate is greater than 30%, the direct bonding coper(DBC) substrate solder layer void rate is greater than 40%, the influences of different void growth models are almost the same. Finally, power cycle aging, ultrasonic test and junction temperature test verify the conclusion of this paper.
作者
唐圣学
马强
陈冬
姚芳
王希平
Tang Shengxue;Ma Qiang;Chen Dong;Yao Fang;Wang Xiping(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Electrical Engineering,Hebei University of Technology,Tianjin 300130,China;Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province,School of Electrical Engineering,Hebei University of Technology,Tianjin 300130,China)
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2020年第8期244-254,共11页
Chinese Journal of Scientific Instrument
基金
河北省自然科学基金(E2019202481)
河北省自然科学重点基金(E2017202284)项目资助
