摘要
分析了射频等离子体增强化学气相淀积(RFPECVD)参数对含氢非晶碳(α-C∶H)刻蚀特性的影响规律。首先,针对射频功率、丙烯流量、反应腔压强、极板间距等工艺参数对膜层刻蚀特性的影响进行了实验,并通过确定性筛选设计方法产生实验矩阵。然后,采用RFPECVD工艺在硅衬底上淀积α-C∶H。最后,运用多元回归方法对刻蚀速率、刻蚀均匀性进行了研究。结果表明,淀积工艺参数的变化对膜层的均匀性没有影响,对膜层的刻蚀速率有影响。该工艺参数对刻蚀特性的影响研究对优化CVD工艺具有参考价值。
The influence of RF plasma enhanced chemical vapor deposition(RFPECVD)parameters on the etching characteristics of hydrogenated amorphous carbon(α-C∶H)was revealed.Firstly,experiments about the correlation between process parameters(RF power,propylene flow,chamber pressure and plate spacing)and etching characteristics of this film was performed,and the experimental matrix was generated by definitive screening design method.Then,RFPECVD was adopted to depositα-C∶H on silicon wafer.Finally,the etch rate and the uniformity of etchedα-C∶H were studied by multivariate regression analysis.Results showed that the variation of deposition process parameters did not affect the uniformity of the etchedα-C∶H.However,all of this deposition process parameters had impact on etching rate ofα-C∶H.The study of the influence of deposition process parameters on the etch rate had great significance for controlling and optimizing the CVD process parameters.
作者
邹雄峰
董立松
陈志刚
韦亚一
ZOU Xiongfeng;DONG Lisong;CHEN Zhigang;WEI Yayi(School of Microelectronics,University of Chinese Academy of Sciences,Beijing100029,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing100029,P.R.China;Semiconductor Manufacturing International Corporation,Shanghai 201203,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第1期126-131,共6页
Microelectronics
基金
国家科技重大专项资助项目(2016ZX02301001).
