摘要
在阐述银电化学迁移机理的基础上,利用体视显微镜、晶体管图示仪、光学显微镜、X射线检测系统及扫描电子显微镜等技术手段,系统分析了智能电表中肖特基二极管的电化学失效原因。结果表明:二极管芯片正面局部区域遭受了S污染,并发生了Ag电化学迁移现象;芯片边缘析出了Ag枝晶,导致芯片发生短路烧毁,二极管最终失效。本工作的研究成果为电子封装互连焊点中的电化学迁移导致的失效分析提供实践参考。
Based on the mechanism of the electrochemical migration of silver,the electrochemical failure root cause of a Schottky diode in smart meter was systematically analyzed through stereomicroscope,transistor curve tracer,optical microscope,X-ray inspection system and scanning electron microscope.The results show that the surface of the diode die was polluted by S element,and Ag electrochemical migration occurred.Ag dendrites precipitated on the edge of the chip,resulting in short circuit burning of the chip,and the diode eventually failed.This study provides a practical guidance for the failure analysis induced by Ag electrochemical migration in the interconnection solder joints of electronic packaging.
作者
徐晟
王宏芹
牛峥
李洁森
甘卿忠
XU Sheng;WANG Hongqin;NIU Zheng;LI Jiesen;GAN Qingzhong(Guangzhou Bureau,China Southern Power Grid Extra High Voltage Power Transmission Company Power Transmission Company,Guangzhou Guangdong 510663,China;The Fifth Electronics Research Institute of Ministry of Industry and Information Technology,Guangzhou Guangdong 510610,China)
出处
《电子器件》
CAS
北大核心
2022年第2期272-276,共5页
Chinese Journal of Electron Devices
基金
湿热运行环境下二次元件状态感知策略研究项目(CGYKJXM20190090)
