摘要
分析表明,双色光电探测器主要应用于宽光谱测量的应用场景,光谱响应范围将直接影响器件在测试系统中的性能。研制波长拓展型可见-近红外双色光电探测器,器件中调整了Si基和InGaAs基光电二极管芯片结构,使器件的光谱响应范围分别向紫外和红外方向进行了拓展。针对双芯片叠层封装结构,对Si基芯片进行了背面处理,降低了近红外光在该芯片上的吸收系数,采用3D加工工艺,制作一体化陶瓷载体,简化了器件加工工艺。研制的器件光谱响应范围达到300~1750nm,峰值响应度≥0.63A/W。
Two-colorphotodetectors are mainly used in wide spectrum measurement,the spectral response range will directly affect the performance of the device in the test system.Based on this situation,a wavelength extended visible-near infrared two-color photodetector is developed.The structure of Si base and InGaAs based PD is adjusted in the device.The spectral response range of the device is extended to UV and IR respectively;According to the requirements of two-chip stack packaging structure,the silicon-based chip was thinned on the back,the absorption coefficient of nearinfrared light on the chip is reduced,the integrated ceramic substrateis manufactured by 3 D processing technology,the fabrication of integrated ceramic carrier simplifies the packaging process.The spectral response range of the device is from 300 nm to 1750 nm,The peak response≥0.63 A/W.
作者
董绪丰
柴松刚
李睿智
DONG Xufeng;CHAI Songgang;LI Ruizhi(Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
出处
《电子技术（上海）》
2020年第7期1-3,共3页
Electronic Technology
关键词
光电子器件
双色探测器
波长拓展
光电二极管
optoelectronic devices
two-colorphotodetector
wavelength extended
photodetector
