摘要
为探索氧化铟基半导体薄膜择优取向的控制生长策略,并探究晶面取向对光电性能的影响,采用磁控溅射技术在石英(SiO_(2))衬底上分别制备了具有(222)和(440)晶面择优取向的氮掺杂氧化铟(In_(2)O_(3):N)薄膜,利用X射线衍射仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见分光光度计对In_(2)O_(3):N薄膜的晶体结构、表面形貌、元素组成、光学带隙进行了表征,并研究了不同择优取向薄膜的光电特性。结果表明:不同择优取向In_(2)O_(3):N薄膜的氮掺杂均以替位式为主,氮掺杂会导致氧化铟的禁带宽度减小至2.89 eV。相比(222)晶面择优取向,(440)晶面择优取向的In_(2)O_(3):N薄膜的光响应时间更短。
In this work, for exploring the controlled growth strategy of indium-oxide-based semiconductor film with preferred orientation and investigating the effect of crystal orientation on the photoelectric property, nitrogen-doped indium oxide(In_(2)O_(3):N)films with(222) and(440) preferred orientation were prepared on quartz(SiO_(2)) substrate by magnetron sputtering, respectively. The crystal structure, surface morphology, elemental composition and optical bandgap of In_(2)O_(3):N films were characterized by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometer, respectively.The photoelectric properties of as-grown films with different preferred orientation were investigated. The results show that the nitrogen doping in In_(2)O_(3):N films with different preferred orientation mainly is dominated by nitrogen substitutional oxygen. The band gap of indium oxide can be reduced to 2.89 eV by nitrogen doping. The In_(2)O_(3):N film with(440) preferred orientation has a shorter photoresponse time than the(222) one.
作者
孙辉
沈龙海
刘子童
陈建金
张芮馨
程佳
张兴来
SUN Hui;SHEN Longhai;LIU Zitong;CHEN Jianjin;ZHANG Ruixin;CHENG Jia;ZHANG Xinglai(School of Science,Shenyang Ligong University,Shenyang 110159,China;Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2023年第1期145-151,共7页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(12274304)
超硬材料国家重点实验室开放课题(202004)
中国科学院青年创新促进会项目(2019197)。
关键词
氮掺杂氧化铟
磁控溅射
择优取向
光电探测
nitrogen-doped indium oxide
magnetron sputtering
preferred orientation
photoelectric detection
