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膜厚与紫外光辐照对反应溅射法制备的F掺杂SnO2薄膜结构与光电性能的影响

Effects of Thickness and Ultraviolet Irradiation on Structural, Optical and Electrical Properties of F-doped SnO2 Films Prepared by Reactive Sputtering
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摘要 以Sn+SnF2为靶材,在衬底温度为150和300℃通过反应磁控溅射法制备了厚度为20~400 nm的F掺杂SnO2(FTO)薄膜,并通过紫外光(UV)辐照对2种厚度(20和240nm)的样品进行了后处理,研究了膜厚和UV辐照时间对薄膜结构与透明导电性能的影响。结果表明:随着膜厚或衬底温度的增加,FTO薄膜结晶度提高,但择优取向保持为(211)面;与此同时,薄膜中压应力增大,而导电性能下降。随着膜厚的增加,薄膜透光性先降低后增加,而其禁带宽度(Eg)先明显增加后趋于稳定。增大衬底温度可增大薄膜的透光性和Eg。UV辐照可明显提高薄膜的载流子浓度,从而增强薄膜的导电性能,但对薄膜的透光性无明显改变。另外,讨论了膜厚引起FTO薄膜结构及光电性能变化的相关机制,分析了UV辐照对FTO薄膜光电性能的改善机理。 F-doped SnO2(FTO)thin films with the thickness of 20–400 nm were prepared via reactive magnetron sputtering at 150–300℃using Sn+SnF2 as a target,and the prepared FTO films were further treated by ultraviolet(UV)irradiation.The effects of film thickness and UV irradiation time on the structural,optical and electrical properties of FTO films were investigated.The results show that the crystallinity of FTO films improves and the preferred orientation remains(211)plane with the increase of film thickness or substrate temperature.Meanwhile,the compressive stress existed in the films increases and the conductive properties of films degrade.The transmittance of the films firstly decreases and then increases,and their energy gap(Eg)firstly increases and then becomes stable when the film thickness increases.Increasing substrate temperature can increase the transmittance and Eg of the films.UV irradiation can increase the carrier concentration of the films,thus enhancing the conductive properties of the film,but it has little effect on the transmittance of the film.In addition,the influence of film thickness on the structural,optical and electrical properties of FTO films was discussed,and the mechanism of improving the optical and electrical properties of FTO film by UV irradiation was analyzed.This study could provide a reference for the preparation of FTO thin films by magnetron sputtering technology and the improvement of their properties.
作者 祝柏林 宋肖肖 陶冶 易昌鸿 吴隽 ZHU Bailin;SONG Xiaoxiao;TAO Ye;YI Changhong;WU Jun(State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China)
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2020年第4期491-498,共8页 Journal of The Chinese Ceramic Society
基金 湖北省大学生创新创业训练计划项目(201610488042).
关键词 反应溅射 氟掺杂氧化锡薄膜 透明导电性能 紫外光辐照 reactive sputtering fluorine-doped stannic oxide film transparent conductive properties ultraviolet irradiation
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