摘要
采用第一性原理计算并分析了单层二硫化钼(MoS2)在1到7层六方氮化硼(hBN)衬底上构成的垂直异质结的表面特性及其MIS(金属-绝缘体-半导体)结构的电容-电压特性。在分析hBN层数改变对MoS2介电常数影响的基础上,进一步研究了其对MoS2/hBN界面表面态的影响,最后计算了hBN层数改变对异质结的MIS结构的影响。计算结果表明,新型MoS2/hBN异质结构造的MoS2 FET,可以借助二维层状hBN层数的改变来调控其界面的性质,为新一代基于MoS2的纳米器件的研发提供必要的理论支撑。
Based on the first principles,the surface characteristics of vertical heterojunction composed of single-layer molybdenum disulfide(MoS2)on 1-7-layer hexagonal boron nitride(hBN)substrates and the capacitance voltage characteristics of MIS(metal insulator semiconductor)structure are calculated and analyzed by first principles.Based on the analysis of the influence of hBN layer number on MoS2 dielectric constant,the influence of hBN layer number on MoS2/hBN interface surface state is further studied.Finally,the influence of hBN layer number on MIS structure is calculated.The calculation results show that the properties of MoS2 FET fabricated by MoS2/hBN heterostructure can be adjusted by changing the number of two-dimensional hBN layers,which provides necessary theoretical support for the development of new generation MoS2 based nano devices.
作者
李海霞
毛凌锋
崔磊
LI Hai-xia;MAO Ling-feng;CUI Lei(Suqian College,Suqian 223800,China;Soochow University,Suzhou 215131,China;University of Science&Technology Beijing,Beijing 100083,China)
出处
《功能材料与器件学报》
CAS
2020年第5期361-368,共8页
Journal of Functional Materials and Devices
基金
国家自然科学基金项目(61774014)
江苏省高校自然科学研究面上项目(19KJB510060)
江苏省研究生科研与实践创新项目(KYZZ15_0331)
江苏省六大人才高峰项目(XCL227)
