摘要
应用溶胶 凝胶技术在Pt MgO(10 0 )衬底上成功地制备了Ba0 .65Sr0 .3 5TiO3 外延薄膜 .XRD和SEM分析结果表明 :该薄膜在O2 气氛中 6 5 0℃热处理 1h后 ,其 (0 0 1)面是沿着Pt(10 0 )和MgO(10 0 )面外延取向生长的 ;薄膜表面均匀致密 ,厚度为2 6 0nm ,平均晶粒大小为 4 8.5nm .当测试频率为 10kHz时 ,BST薄膜的介电常数和损耗因子分别为 4 80和 0 .0 2 .介电常数 温度关系测试结果表明 :sol gel工艺制备的Ba0 .65Sr0 .3 5TiO3 薄膜其居里温度在 35℃左右 ,且在该温度下Ba0 .65Sr0 .3 5TiO3 薄膜存在扩散铁电相变特征 .当外加偏置电压为 3V时 ,BST薄膜的漏电流密度为 1.5× 10 -7A cm2 .该薄膜可作为制备新型非制冷红外焦平面阵列和先进非制冷红外热像仪的优选材料 .
Epitaxial Ba 0.65 Sr 0.35 TiO 3 thin films were successfully deposited on Pt?MgO(100) substrates by sol gel techniques. XRD patterns demonstrated that(001) planes of BST films were mainly oriented parallel to Pt(100) and MgO(100). SEM results showed that the surface of BST thin film was smooth and free of cracks, and the film thickness was 260nm. The average grain size of the films was about 48.5nm. The dielectric constant and dissipation factor for Ba 0.65 Sr 0.35 TiO 3 thin film at ...
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第5期393-396,共4页
Journal of Infrared and Millimeter Waves
关键词
薄膜
溶胶-凝胶工艺
外延生长
电性能
BST thin films
sol gel technique
epitaxial growth
electrical properties.
