摘要
本文综述非晶态半导体／金属薄膜退火过程中金属诱导非晶态半导体晶化的研究，综述对若干非晶态半导体与金属组成的薄膜（Ｇｅ－Ａｕ、Ｇｅ－Ａｇ、Ｇｅ－Ａｌ、Ｇｅ－Ｓｅ、Ｇｅ－ｐｄ、Ｓｉ－Ａｇ、Ｓｉ－Ａｌ、Ｓｉ－ｐｄ、Ｓｉ－Ｃｕ、ｓｉｃ－Ａｌ、Ｓｉ＿３Ｎ＿４－Ａ１）晶化后形成的图形进行的分形研究，内容包括分形形成的实验规律、根据微结构电镜观测结果提出的随机逐次成核模型、以及对分形晶化进行的计算机模拟。
This paper reviews the metal-induced crystallization of amorphous semiconductor/met-al (a-S/M) films during annealing and the fractal investigation of the patterns formed in aseries of a-SIM films (Ge-Au, Ge-Ag, Ge-Al, Ge-Se, Ge-pd, Si-Ag, Si-Al, Si-Pd. Si -Cu , SiC-Al , Si_3N_4-Al ) , including influence of various experimental conditions .random succesive nucleation model based on transmission electron microscopy observation ofmicrostructure and computer simulation of the fractal formation.
出处
《物理学进展》
CSCD
北大核心
1994年第4期435-452,共18页
Progress In Physics
