摘要
为实现施密特触发器低功耗、回差可控,将神经元MOS器件的控阈技术用于施密特触发器的设计中,设计出基于神经元MOS器件的施密特触发器,并且进一步提出了外部可控回差的施密特触发器的设计.通过HSPICE对电路进行模拟,实验表明此设计仅需2个MOS管,功耗降低30%.并且这种通过改变外部电压值调整回差电压大小的方法比以往的方法更为方便实用.
Apply the Threshold-ontrollable technique of Neuron MOSFET device in the design of Schmitt trigger, which makes the Schmitt trigger more simple and reduce its power consumption compared to the traditional Neuron MOSFET device. Based on this method, a Schmitt trigger whose voltage hysteresis can be tuned from outside is proposed. It is more convenient and effective to adjust the voltage hysteresis by tuning the voltage outside.
出处
《电子器件》
CAS
2007年第6期2057-2060,共4页
Chinese Journal of Electron Devices
关键词
神经元MOS
施密特触发器
控阈技术
回差
Neuron MOSFET
Schmitt trigger
threshold-controllable technique
voltage hysteresis
