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单晶铜薄膜纳米压痕过程的分子动力学模拟 被引量:1

MD Simulation of Nanoindentation of Monocrystalline Copper Film
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摘要 使用三维分子动力学方法模拟了单晶铜薄膜的纳米压痕过程,研究了压头半径对纳米压痕过程的影响;采用Morse势函数计算试样原子与压头原子之间、试样原子之间的相互作用关系。结果表明:单晶铜薄膜纳米压痕的力学机理是非晶态产生的变形;纳米压痕过程具有尺寸效应,压头大小对单晶铜薄膜纳米压痕的分子动力学模拟结果有显著的影响。 Three-dimensional molecular dynamics(MD) simulation was conducted to study the effect of indenter size on the AFM-based nanoindentation process of monocrystalline copper film.The Morse potential was utilized to compute the interaction between workpiece atoms and tool atoms,and also the interaction between sample workpiece atoms.The results show that the plastic deformation via amorphous transformation is the mechanism of nanoindentation of monocrystalline copper film.The MD simulation results of nanoindenta...
出处 《机械工程材料》 CAS CSCD 北大核心 2008年第4期81-83,共3页 Materials For Mechanical Engineering
关键词 纳米压痕 分子动力学 单晶铜 薄膜 nanoindentation molecular dynamics monocrystalline copper film
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参考文献6

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