摘要
利用电镀方法在覆盖有金属Ti的玻璃衬底上制备了Ni催化剂,采用微波等离子体化学气相沉积技术,以CH4和H2为反应气体,在450℃的低温下制备了CNTs薄膜。利用扫描电子显微镜和Raman光谱对其表面形貌和结构进行了分析,在真空度小于2×10-4 Pa的环境中测试了CNTs薄膜的场致电子发射特性,开启电场2.7 V/μm。研究表明:微波等离子体化学气相沉积技术低温制备CNTs薄膜是可行的,且该薄膜具有良好的场发射性能。
Ni catalyst was prepared by electrodepositing method on the glass substrate which was sputtered with Ti films,and synthesized CNTs films by microwave plasma chemical vapor deposition(MPCVD) technology at low temperature(450 ℃),using CH4 and H2 as gas sources.CNTs' films morphology and structure were examined by scanning electron microscopy(SEM) and Raman spectrum.The field emission properties of CNTs films were measured with a parallel diode-type configuration in a vacuum chamber with the pressure below 2×10-4 Pa,the turn on field was about 2.7 V/μm.It proved that: It was possible to synthesize CNTs films by MPCVD technology at low temperature,the films which were synthesized under conditions have fine field emission properties.
出处
《真空与低温》
2007年第4期187-190,244,共5页
Vacuum and Cryogenics
基金
教育部重点项目基金(NO:205091)
