摘要
研究了一种新型P+PIN结构的硅650nm光电探测器,采用N型硅衬底,经过氧化光刻后,先作一次很薄淡硼扩散,再进行浓硼扩散,这样形成高低发射结的方法,减薄死层厚度,减少光生载流子的复合,提高了光电转换效率,从而使光谱响应度从普通650nm光电探测器的0.30A/W提高到了0.380A/W,且具有约279MHz的较高响应速度.
A P+PIN structure 650nm photodetector is studied. After oxidation and photo fabrication on an N type Si substrate, we diffuse a thin P layer, and then diffuse a thick P+. So it forms a low-high emitter junction and reduce the inactive layer,and decreases the photo-induced carriers’ recombination,and enhances the conversion efficiency, and thus enhances spectrum responsivity.from common 650 nm photodetectors’ 0.30 A/W to 0.380 A/W, and has about 279 MHz higher responding speed, furthermore.
出处
《传感技术学报》
CAS
CSCD
北大核心
2007年第10期2218-2221,共4页
Chinese Journal of Sensors and Actuators
