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HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs
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摘要 High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layers. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results. High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layers. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.
出处 《Tsinghua Science and Technology》 SCIE EI CAS 2003年第2期130-134,共5页 清华大学学报(自然科学版(英文版)
基金 Supported by the National Natural Science Foundation of China(No.69836020) the"985" Program of the Ministry of Education(No.985-information-40 key-5)
关键词 Chemical vapor deposition Silicon compounds SUBSTRATES Transmission electron microscopy Chemical vapor deposition Silicon compounds Substrates Transmission electron microscopy
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