摘要
采用传统陶瓷烧结工艺,制得性能良好的Al掺杂ZnO陶瓷靶。以此靶为溅射源,利用射频磁控溅射法制备ZAO薄膜,着重研究了400℃保温2 h重复退火次数对ZAO薄膜的组织结构及光电性能的影响。结果表明,随着重复退火次数的增加,薄膜晶体结构保持不变,薄膜结晶质量提高,但晶格尺寸逐渐变小;同时,随着退火次数增加,样品的平均透光率虽稍下降,但所有样品的透光率仍保持在80%以上,呈现良好的透光性;除经3次重复退火的样品外,退火使其它样品的紫外吸收边从375 nm附近移至360 nm左右;重复退火次数的增加使样品的电阻率先明显降低,再有较大的回升,之后又降低,当重复退火两次时,电阻率降至最低,为8.5×10-4Ω.cm。对上述现象、结果及机理进行了详细讨论。
Al-doped ZnO(ZAO) ceramic targets with good properties were prepared by the traditional solid-state sintering process.ZAO thin films were deposited on room temperature glass substrates by R F magnetron sputtering technology.The electrical and optical properties in the Al-doped ZnO films as function of the cycle-annealing times for 2 hours at 400 ℃ were investigated.It was observed that such films had a typical polycrystalline hexagonal ZnO structure with an obvious(002) preferential growth,which didn t chan...
出处
《微细加工技术》
EI
2008年第1期21-25,共5页
Microfabrication Technology
关键词
陶瓷靶
ZAO薄膜
射频磁控溅射
循环退火
电阻率
透光率
ceramic target
ZAO thin films
RF magnetron sputtering
cycle-annealing
optoelectronic properties
