摘要
The effect of buried misfit dislocation on the distribution of Ge self-assembled quantum dots (SAQDs) grown on a relaxed SiGe buffer layer was investigated. The strain field of arrays of buried dislocations in a relaxed SiGe buffer layer provided preferential nucleation sites for quantum dots. Burgers vector analysis using plan-view transmission electron microscopy (TEM) verified that the preferential nucleation sites of Ge SAQDs depended on the Burgers vector direction of corresponding dislocations. The measurement of the lateral distance between SAQDs and dislocations together with crosssection TEM observation clarified that the location of SAQDs was at the intersection of the dislocation slip plane and the top surface. The misfit strain should be an additional factor governing the uniformity in size, shape and distribution of Ge SAQDs.
