Far-infrared Absorption Spectra and Properties of SnO_2 Nanorods
Far-infrared Absorption Spectra and Properties of SnO_2 Nanorods
摘要
Nanostructured materials have drawn considerable attention because they are promising candidates for nextgeneration electronic and photonic devices with low power consumption[1-5]. A number of methods, such as laser ablation[6], template-induced growth[7], arc discharge [8], vapor transport [9], and molecular-beam epitaxy[10] have been developed to synthesize Si, Ge, MgO,SnO2, GaN, and Ga2O3 nanowires or nanorods[11-15].……
基金
ThisworkwassupportedbytheNationalNatureScienceFoundationofChina(Nos.29890210,10074024,and10023001).
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