摘要
用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN。在生长了一个 2 0nm厚的缓冲层后 ,外延生长了 1 μm厚的立方GaN外延层。利用二次离子质谱测定了掺杂的程度。
Si doped and un do ped cubic GaN were grown by low pressure metalorganic vapor phase epitaxy using a two step growth process. After the deposition of a 20nm thick buffer layer, an about 1μm thick Si doped cubic GaN epitaxial layer was deposited. Doping l evel was determined by secondary ion mass spectroscopy measurements. X ray diff raction and photoluminescence measurements were used to characterize the str uctural and optical quality of the undoped and the Si doped cubic GaN.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2001年第z1期1-4,共4页
Chinese Journal of Luminescence
