摘要
The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of nitride based LEDs,the use of GaN IED has the potential to compete with 1raditional filament and discharge lamps,for the provision of white lighting,and there has been an explosion of interest in the MOCVD growth of GaN based materials with an increasing focus on large area multiwafer reactors and wafer uniforrmity.This paper will review the design philosophy and characteristics of close-coupled showerhead reactors,relating these to the requirements of group Ⅲ-nitride growth,and will present a selection of data resulting from the operation of such equipment.These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and production environments.
在紫外和可见光电子器件、高温电子学器件、冷阴极和太阳防护探测器的应用中,Ⅲ族氮化物是一类重要的材料.近年来,氮化物基的LED的制备成功,具有提供白光照明代替白炽灯和荧光灯的潜在能力.人们对用MOCVD方法生长GaN基材料的兴趣日益高涨,特别是对多片、均匀生长的大尺寸反应器的要求日益迫切.本文概述了紧配合喷淋头反应器的设计思想和其特性.结合Ⅲ族氮化物生长对设备的相关要求,给出了这种设备运行的一些结果.这些结果表明,这种紧配合喷淋头反应器很适合在研究和产品生产中的GaN基材料结构的生长.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2001年第z1期103-106,共4页
Chinese Journal of Luminescence
