摘要
采用溶胶-凝胶浸渍提拉法在普通玻璃片上制备了ZnO:Al薄膜。通过热重-差示扫描量热曲线分析了前驱体在热处理过程中的物理化学变化,采用X射线衍射分析了薄膜的结晶特性。结果表明:ZnO:Al的结晶过程分2个阶段:在约300℃开始成核和生长,在500℃左右进一步晶化。在413～523℃时,薄膜组成为ZnO:Al与残余碳的混杂物;温度升至500℃时,残余碳大部分完全氧化,ZnO:Al进一步晶化,使薄膜结晶质量变好。薄膜的最佳预热处理温度和后期热处理温度分别为420℃和530℃。通过扫描电镜观察发现:在530℃下后期热处理的薄膜具有致密均匀的微观组织结构,在400℃下真空退火处理后其表面方电阻最小(140?/□)。所有薄膜在可见光范围内透过率均超过90%。
ZnO:Al thin films were prepared by the sol-gel dip-coating process on soda-lime glass substrates.The physical and chemical changes of the precursors during thermal treatment were analyzed by the thermogravimetry-differential scanning calo-rimetry curves and the crystalline quality was characterized by X-ray diffraction.The results show that the crystallization process of ZnO:Al thin films is comprised of two stages:the primary nucleation and crystal growth stage,occurring at～300 ℃ and the per-fection of cry...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2009年第2期208-213,共6页
Journal of The Chinese Ceramic Society
关键词
氧化锌
铝
溶胶-凝胶
结晶
薄膜
透明导电氧化物
zinc oxide
aluminum
sol-gel
crystallization
thin films
transparent conductive oxides
