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Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells 被引量:1

Far-infrared absorption studies of Be acceptors in δ-doped GaAs/AlAs multiple quantum wells
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摘要 We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20,15 and 10 nm. Low temperature far-infrared absorp-tion measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states,respec-tively. Using a variational principle,the 2p-1s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2pz → 1s transitions is in good agreement with the D-like line experi-mental data. We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20,15 and 10 nm. Low temperature far-infrared absorp-tion measurements clearly show three principal absorption lines due to transitions of Be-acceptor states from the ground state to the first three odd-parity excited states,respec-tively. Using a variational principle,the 2p-1s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2pz → 1s transitions is in good agreement with the D-like line experi-mental data.
出处 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2006年第6期702-708,共7页 中国科学:物理学、力学、天文学(英文版)
关键词 shallow ACCEPTOR impurities δ-doped GaAs/AlAs multiple quantum wells far-infrared absorptions. shallow acceptor impurities,δ-doped,GaAs/AlAs multiple quantum wells,far-infrared absorp-tions.
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