摘要
通过添加助熔剂,生长了掺Mg近化学计量比LiTaO3(SLT)晶体,晶体的居里温度为684±1℃。对厚度1.8 mm的晶片进行外加单脉冲电场室温极化,得到了完全反转的畴结构。利用化学腐蚀的方法,观察极化过程中反转畴成核、运动及合并的过程。结果表明,室温极化时,反转畴的运动是非匀速的,实现完全反转至多需要50 s,极化初始阶段反转畴的平均横向扩展速率为0.012 mm/s。
MgO-doped near-stoichiometric lithium tantalate(SLT) crystal has been grown by adding flux.The Curie temperature of the grown crystal is 684±1 ℃.The crystal wafer with 1.8 mm thickness has been polarized with single pulse at room temperature and fully inversed domain structure is obtained.Chemical etching method is used to investigate the new domain nucleation,movement and coalescence process.The results indicate the movement of the inverted domain is not in uniform velocity during room temperature polariza...
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第9期1166-1169,共4页
Journal of Optoelectronics·Laser
基金
中国电子科技集团基金资助项目(0708031)
