摘要
利用直流电弧技术在硅基片上制备氮化铝薄膜,研究了薄膜的折射率、消光系数、透过率和沉积速率。薄膜的光学折射率、消光系数、厚度通过椭偏法测试并拟合得到;薄膜的透过率谱通过傅里叶变换红外光谱仪测试,薄膜的沉积速率通过厚度的相应时间计算得到;利用柯希模型来拟合测试得到可见区光学常数,外推得到薄膜在整个近红外、中远红外的光学常数.结果表明:薄膜的折射率随工艺参数的不同有较大的变化范围,并且薄膜在较宽的光谱范围内消光系数为零;薄膜的沉积速率达到85 nm·min^(-1),单面镀制氮化铝薄膜的硅样片的峰值透过滤达到了69.2%.
A1N films are grown on silicon substrate by DC arc deposition and the films' refractive index, extinction index,transmittance and deposition rate are researched.The films,refractive index,extinction index and thickness are acquired by ellipsometry,and the transmittance spectrum are measured by FTIR,and the deposition rate is calculated in using the films,thickness and deposition time.Optical constants of the films at infrared are determined by extrapolation.The results show the films,refractive index change largely with the different technique parameters.Furthermore,the films' extinction index is always zero.In addition,the peak value of silicon wafer with one-side AIN films is up to 69.2%,which is close to theory value,and the deposition rate reached to 85 nm·min^(-1).
出处
《红外与激光工程》
EI
CSCD
北大核心
2006年第z2期206-210,共5页
Infrared and Laser Engineering
