2～3μmGaAs基InAs/GaSb超晶格材料
2～3 μm GaAs based InAs/GaSb superlattices
摘要
采用分子束外延方法在GaAs(100)衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10 K光荧光谱峰值波长在2～2.6 μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整.InAs/GaSb超晶格材料的成功生长是制备这类红外探测器件重要的第一步.
出处
《红外与激光工程》
EI
CSCD
北大核心
2007年第z1期35-37,共3页
Infrared and Laser Engineering
基金
国家自然科学基金资助项目(60607016:60625405)
参考文献13
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