摘要
对在溅射状态下制得的FeSiAl薄膜的结构和磁性能随溅射工艺参数如溅射功率、溅射气压、靶间距等的变化规律进行了讨论与分析。实验结果表明,溅射态下的FeSiAl薄膜具有(220)织构bcc α无序相,其4πMs可以达到9.9×106A/m(9.9kGs)。较高的溅射功率、合适的溅射Ar气压以及靶间距都有利于降低薄膜的矫顽力Hc。
The crystal structure and magnetic properties of as-deposited FeSiAl films under various sputtering parameters, such as input power, sputtering pressure, the distance between substrate and target are discussed and analyzed. The results indicate that there is mainly bcc-α disordered phase with preferred (220) orientation in as-sputtered FeSiAl films. The value of 4πMs is about 9.9×10~6 A/m. High input power, suitable pressure of Ar gas and distance between substrate and target may be favorable for low coercivity.
出处
《上海海事大学学报》
北大核心
2004年第4期89-92,共4页
Journal of Shanghai Maritime University
基金
上海海事大学青年骨干教师培养计划资助(025063)
