摘要
单晶硅 SOI高温压力传感器是一种新型高性能高温压力传感器。它与扩散硅压力传感器相比有较高的工作温度 ,与多晶硅高温压力传感器相比有更高的工作灵敏度。这主要得益于它采用了单晶硅膜的 SOI结构。本文给出了这种压力传感器的工艺生产过程 ,并相对深入地讨论了各向异性腐蚀硅杯和静电封接这两道工序。介绍了此种压力传感器的工作原理。最后给出了测试结果及结论。
High temperature SOI Monocrystal silicon Pressure Sensor is a new type high temperature pressure sensor with high performances. Compared with Doped Mono crystalline Silicon Pressure Sensor, it shows great advantages in high operating temperature. And it shows a higher sensitivity over high temperature Polysilicon Pressure Sensor. These benefit from the SOI Monocrystal silicon structure it possesses. This paper reports the fabrication processes of this pressure sensor and discusses two techniques, silicon anisotropic etching and Si Glass anodic bonding, in detail. This paper also discusses operation principle of it. At last, the testing results are presented and a conclusion is made.
出处
《传感技术学报》
CAS
CSCD
2002年第4期322-325,共4页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金资助项目 (基金号 :698762 0 7)
关键词
单晶硅SOI结构
灵敏度
高温压力传感器
SOI monocrystal silicon structure
sensitivity
high temperature pressure sensor
