摘要
随着半导体特征工艺尺寸减小、集成度提高,静态存储器(SRAM)对单粒子锁定呈现出极其敏感的现象和趋势,为此国际航天界开展了大量的试验评估工作,剔除和杜绝了一些极端敏感器件在空间的应用。结合国内外空间应用背景,文章利用脉冲激光实验装置和重离子加速器,分别对三星公司新旧两种型号的4M位SRAM芯片进行了单粒子锁定试验评估。试验测得两型号芯片的单粒子锁定阈值差异巨大,新型号芯片的锁定阈值低于1.5MeV·cm2/mg,而老型号芯片的锁定阈值高于39.6MeV.cm2/mg。这种对单粒子锁定极端敏感的芯片若应用于空间,将会发生0.008～0.04次/天的频繁锁定事件,极大地威胁航天器的安全和可靠。为应对这种单粒子锁定极端敏感的现象和趋势,提出了加强我国航天产品设计、元器件采购、筛选、试验等的规范、技术和条件的建议。
Advances in the manufacture of SRAMs over the years have resulted in enormous gains in speed, array size, cell density, and reduction in power consumption. ESA and NASA’s experts have studied the SEE response of these SRAMs, and discovered the extreme sensitivity to SEL in current generations of SRAM devices. Recently, we have tested on Samsung 4M SRAM using a pulsed laser system and a heavy ion accelerator. Heavy ion test shows that the latch-up LET threshold of Samsung 4M SRAM KM684002 is above 39.6 MeV·cm2/mg, but the new Rev. D Samsung 4M SRAM K6R4016C1D has a latch-up LET threshold of below 1.5 MeV·cm2/mg. If K6R4016C1D was used in spacecraft, 0.008～0.04/day SEL would happened, which is a great threat to our aerospace safety. So it should be warned in using these extreme SEL susceptibility devices.
出处
《航天器环境工程》
2008年第3期263-268,199,共6页
Spacecraft Environment Engineering
关键词
单粒子锁定
锁定阈值
静态存储器
航天器
single event latch-up
latch-up LET threshold
SRAM
spacecraft
