摘要
基于频率响应理论模型,分析了同轴封装的雪崩光电探测器的高频特性.包含芯片、键合金丝、跨阻放大器和同轴管座等各部分的高频特性及对器件高频特性的影响.通过调节封装过程中不同键合金丝引入的电感参量,可以得到不同现象的频率响应.最后考虑实际工程条件,优化得到了10GHz的-3dB带宽的同轴封装雪崩光电探测器件.
Based on the frequency response model,high frequency characteristic analysis for the TO packaged avalanche photodetectors is presented.The influence on frequency performance of TO packaging,including chip,bondwire,transimpedance amplifer,and TO header elements are investigated.By changing inductance parameters induced by different bandwires,the different frequency responses are observed.Finally,by considering the engineering conditions,a-3 dB bandwidth of 10GHz is optimally obtained for TO packaging.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第2期240-243,共4页
Acta Photonica Sinica
基金
高等学校优秀青年人才基金项目(No.2009SQRZ099)
国家高技术研究发展计划项目(No.2007AAJ218)资助
关键词
雪崩光电探测器
同轴封装
频率响应
跨阻放大器
Avalanche photodetector
TO can packaging
Frequency response
Transimpedance amplifer
