摘要
在d波超导体/绝缘层/d波超导体(dS/I/dS)中,考虑到结界面势垒散射,运用Bogoliubov-de Gennes(BdG)方程和推广的Furusaki-Tsukada(FT)电流公式,计算了超导结中准粒子的传输系数和直流Josephson电流.研究结果表明:dS/I/dS结中的Josephson电流随着温度的变化曲线强烈依赖于d波超导体的晶轴方位,并且结界面处的势垒散射始终对Andreev反射有抑制作用.
The d.c.Josephson effect has been studied by taking into account the barrier interface scattering effect in a d-wave superconductor/insulator/d-wave superconductor junctions.We calculate the d.c.Josephson current based on the Bogoliubov de Gennes(BdG) equation and Furusaki-Tsukada(FT) formula.It is found that the d.c.Josephson current depends strongly on the crystalline axis orientation of d-wave superconductor in d-wave superconductor /insulator/d-wave superconductor junctions,the barrier strength at interface always suppress the Andreev reflection.
出处
《苏州大学学报(自然科学版)》
CAS
2012年第4期58-62,共5页
Journal of Soochow University(Natural Science Edition)
关键词
dS/I/dS结
d波超导体
Josephson电流
d-wave superconductor/insulator/d-wave superconductor junctions
d-wave superconductor
Josephson current