摘要
在2 kW微波等离子体化学气相沉积装置中,以CH4,H2和O2为反应气体制备金刚石膜,主要研究氧气和形核密度对金刚石膜表面形貌和生长速率的影响。在实验过程中,O2的掺入对相同形核密度表面形貌、质量有影响,其中氢气与甲烷在形核时的体积浓度比为200∶6,生长时的体积浓度比为200∶4,通入0.2 mL/min的O2有助于增大表面金刚石颗粒,并提高金刚石膜的质量,在拉曼表征中只有一个金刚石特征峰。采用不同形核密度时,氧气的通入促进金刚石膜的沉积,并能抑制非晶C的沉积,因为沉积过程中的非晶C质量分数急剧下降,从而提高金刚石膜的生长速率,由1μm/h提高到了1.5μm/h。
Diamond films were grown by a 2 kW microwave plasma chemical vapor deposition reactor using CH4- H2- O2gas mixtures,and the growth rate,surface morphology,as well as the quality of the films,were examined. In the process of experiment,it was clearly seen that low concentration of oxygen promoted the growing up of diamond grains at the same diamond nucleation density,and improved quality of the diamond film. The volume concentration ratio of hydrogen and methane is 200∶ 6 in the nucleation process,and 200∶ 4 in the growing process. For different diamond nucleation density,the addition of oxygen could promote the deposition of diamond film,and inhibit the deposition of amorphous C. During the deposition,decline of the amorphous C resulted in improving growth rate of diamond film from 1 μm / h to 1. 5 μm / h.
出处
《金刚石与磨料磨具工程》
CAS
2013年第4期19-22,27,共5页
Diamond & Abrasives Engineering
基金
国家自然科学基金面上项目(11175137)
关键词
金刚石膜
形核
氧气
生长速率
diamond film
nucleation
oxygen
growth rate
