期刊文献+

Adaptive Layout Partitioning for Dark Field Alternating Phase-Shift Mask Design 被引量:1

一种用于暗域交替式相移掩模设计的自适应版图划分方法(英文)
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摘要 A new partitioning methodology is presented to accelerate 130nm and beyond large scale alternating phase shift mask(Alt PSM) design flow.This method deals with granularity self adaptively.Phase conflicts resolution approaches are described and strategies guaranteeing phase compatible during layout compaction are also discussed.An efficient CAD prototype for dark field Alt PSM based on these algorithms is implemented.The experimental results on several industry layouts show that the tool can successfully cope with the rapid growth of phase conflicts with good quality and satisfy lower resource consumption with different requirements of precision and speedup. 提出了一种新的用于加速 1 30 nm以下工艺交替式相移掩模设计流程的版图划分方法 ,该方法能够自适应调整版图划分的粒度 .讨论了消除相位冲突的方法和版图压缩中相位兼容性保持的策略 .利用上述算法实现的 CAD原型系统经多个工业界例子的测试表明能够有效地适应随版图尺寸而快速增长的相位冲突复杂性 ,同时提供较好的 PSM设计质量 。
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第7期766-770,共5页 半导体学报(英文版)
基金 清华大学 985基础研究资金 (批准号 :2 0 0 1110 0 2 ) 国家自然科学基金 (批准号 :60 2 73 0 11) 国家高技术研究发展计划 (批准号 :2 0 0 3 AA115 110 )资助项目~~
关键词 IC CAD phase-shift mask PARTITION phase conflict design for manufacturing 集成电路计算机辅助设计 相移掩模 划分 相位冲突 可制造性设计 EEACC 2570
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参考文献10

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同被引文献8

  • 1王迪,刘涛,吴为民,洪先龙.具有交替型相移掩模技术的CAD系统[J].计算机集成制造系统-CIMS,2003,9(z1):209-212. 被引量:1
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