摘要
主要研究非晶硅太阳能电池中ZnO:B(BZO)导电膜的激光刻蚀工艺。以厚度为1.2 um的BZO导电膜为刻蚀对象,使用1064 nm红外激光进行刻蚀探讨。实验中通过改变激光电流、脉冲频率、刻蚀速率等参数进行对比实验。当激光刻蚀参数为:电流为35 A、脉冲频率为40 KHz、刻线速率为600 mm/s时,可以获得无导通连接点、无空洞、无烧蚀区域、宽度为35 um的较佳激光刻线。
This paper mainly studies the laser etching process of ZnO:B(BZO) conductive film of amorphous silicon solar cells. 1064 nanometer wavelength infrared laser as experimental device is used etching study for BZO conductive film with the thickness of 1.2 um. We made comparative experiments of changing the excitation current,pulse frequency and the etching rate. Experimental results show that a better laser engraved line which is without conducting connection,no void,no ablation zone can be obtained when working laser current at 35 A, pulse frequency at 40 KHz,etching rate at 600 mm/s. The conclusion provides an important reference for laser etching technology of BZO conductive film applications in the field of amorphous silicon solar cells.
出处
《长治学院学报》
2014年第2期33-36,共4页
Journal of Changzhi University
