摘要
Coupling TiO2 with a narrow band gap semiconductor acting as the photosensitizer has attracted much attention in solar energy exploitation. In this work,the porous TiO2 film was first formed on the conducting glass plate (CGP) substrate by the decomposition of polyethylene glycol (PEG) mixing in titanium hydroxide sol at 450℃. Then,the TiO2/Ag2Se interface composite film was fabricated by interface reaction of AgNO3 with NaSeSO3 on the activated surface of porous TiO2 film. The results of SEM and XRD analyses indicated that the porous TiO2 layer was made up of the anatase crystal,and the Ag2Se layer was made up of congregative small particles that have low-temperature α-phase structure. Due to its efficient charge separation for the photo-induced electron-hole pairs,the TiO2/Ag2Se interface composite film as-prepared has good photovoltaic property and high photocurrent response for visible light,which have been confirmed by the photoelectrochemical measurements.
Coupling TiO2 with a narrow band gap semiconductor acting as the photosensitizer has attracted much attention in solar energy exploitation. In this work,the porous TiO2 film was first formed on the conducting glass plate (CGP) substrate by the decomposition of polyethylene glycol (PEG) mixing in titanium hydroxide sol at 450℃. Then,the TiO2/Ag2Se interface composite film was fabricated by interface reaction of AgNO3 with NaSeSO3 on the activated surface of porous TiO2 film. The results of SEM and XRD analyses indicated that the porous TiO2 layer was made up of the anatase crystal,and the Ag2Se layer was made up of congregative small particles that have low-temperature α-phase structure. Due to its efficient charge separation for the photo-induced electron-hole pairs,the TiO2/Ag2Se interface composite film as-prepared has good photovoltaic property and high photocurrent response for visible light,which have been confirmed by the photoelectrochemical measurements.
基金
Supported by the National Natural Science Foundation of China (Grant Nos. 20875001, 20775001, 50532030 & 20771001)
Innovation Foundation of Anhui Province (Grant No. 2006KJ007TD)
