摘要
Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/.../Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500°C N<SUB>2</SUB> environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.
