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Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells 被引量:2

Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells
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摘要 The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells,the influence of p-type layers on the performance of the solar cells was investigated,and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was obtained.The experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers,and the performance of solar cells can be greatly improved by optimizing p layers.We have achieved an initial active-area efficiency of 8.17% (V oc =0.49 V,J sc =24.9 mA/cm 2 ,FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc =1.31 V,J sc =13.09 mA/cm 2 ,FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells. The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells,the influence of p-type layers on the performance of the solar cells was investigated,and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was obtained.The experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers,and the performance of solar cells can be greatly improved by optimizing p layers.We have achieved an initial active-area efficiency of 8.17% (V oc =0.49 V,J sc =24.9 mA/cm 2 ,FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc =1.31 V,J sc =13.09 mA/cm 2 ,FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells.
出处 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2010年第11期2042-2046,共5页 中国科学:物理学、力学、天文学(英文版)
基金 supported by the National Basic Research Program of China (Grant Nos.2006CB202602 and 2006CB202603) the National Natural Science Foundation of China (Grant No.60806030) Tianjin Natural Science Foundation (Grant No.08JCYBJC14600)
关键词 MICROCRYSTALLINE silicon SOLAR cells QUANTUM CONFINEMENT effect P-TYPE LAYERS microcrystalline silicon solar cells quantum confinement effect p-type layers
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