期刊文献+

Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction 被引量:6

Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction
原文传递
导出
摘要 GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor deposition (MOCVD) using a novel two-step growth. High resolution X-ray diffraction (HR-XRD) is used to investigate the threading dislocation (TD) density of the GaN epifilms. The TD density is calculated from the ω-scans full width at half maximum (FWHM) results of HR-XRD. The edge dislocation destiny of GaN grown on the PSS is 2.7×108 cm-2, which is less than on the CSS. This is confirmed by the results of atomic force microscopy (AFM) measurement. The lower TD destiny indicates that the crystalline quality of the GaN epifilms grown on the PSS is improved compared to GaN epifilms grown on the CSS. The residual strains of GaN grown on the PSS and CSS are compared by Raman Scattering spectra. It is clearly seen that the residual strain in the GaN grown on PSS is lower than on the CSS. GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor deposition (MOCVD) using a novel two-step growth. High resolution X-ray diffraction (HR-XRD) is used to investigate the threading dislocation (TD) density of the GaN epifilms. The TD density is calculated from the ω-scans full width at half maximum (FWHM) results of HR-XRD. The edge dislocation destiny of GaN grown on the PSS is 2.7×108 cm-2, which is less than on the CSS. This is confirmed by the results of atomic force microscopy (AFM) measurement. The lower TD destiny indicates that the crystalline quality of the GaN epifilms grown on the PSS is improved compared to GaN epifilms grown on the CSS. The residual strains of GaN grown on the PSS and CSS are compared by Raman Scattering spectra. It is clearly seen that the residual strain in the GaN grown on PSS is lower than on the CSS.
出处 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2010年第3期465-468,共4页 中国科学:物理学、力学、天文学(英文版)
基金 support from the National Natural Science Foundation of China (Grant Nos. 60877006 and 50872146)
关键词 GAN patterned SAPPHIRE substrate THREADING DISLOCATION XRD GaN patterned sapphire substrate threading dislocation XRD
  • 相关文献

参考文献20

  • 1Nakamura S,Pearton S,Fasol G.The Blue Laser Diode. . 2000
  • 2Chen Y,Schneider R,Wang S Y, et al.Dislocation reduction in GaN thin films via lateral overgrowth from trenches. Applied Physics Letters . 1999
  • 3Chiu C H,Yen H H,Chao C L, et al.Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod- array patterned sapphire template. Applied Physics Letters . 2008
  • 4Narukawa,Y.,Niki,I.,Izuno,K.,Yamada,M.,Mukai,Y.Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip. Japanese Journal of Applied Physics . 2002
  • 5Han J,Crawford M H,Shul R J,et al.AlGaN/GaN quan-tum well ultraviolet light emitting diodes. Applied Physics Letters . 1998
  • 6Ng H M,Doppalaudi D,Moustakas T D,et al.The role of dislocation scattering in n-type GaN films. Applied Physics Letters . 1998
  • 7Sugahara T,Sato H,Hao M,et al.Direct evidence that dislocations are non-radiative recombination centers in GaN. Japanese Journal of Applied Physics . 1998
  • 8Hsu J WP,Manfra MJ,Molnar RJ ,et al.Direct I maging of Reverse-bias Leakage through Pure Screw Dislocations in GaN Fil ms Grown by Molecular Beam Epitaxy on GaN Templates. Applied Physics . 2002
  • 9KAPOLNEK D,KELLER S,VETURY R,et al.Anisotropicepitaxial lateral growth in GaN selective area epitaxy. Applied Physics Letters . 1997
  • 10K. Iida,,T. Kawashima,A. Miyazaki, et al.Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE. Journal of Crystal Growth . 2004

同被引文献40

引证文献6

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部