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Study of thermal expansion of mercury indium telluride crystals by XRD technique

Study of thermal expansion of mercury indium telluride crystals by XRD technique
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摘要 The thermal expansion behavior of mercury indium telluride (MIT) crystals, Hg(3-3x)In2xTe3(x=0.5), based on X-ray diffraction experimental data is studied at 298-573 K. The variation of the lattice parameter of MIT crystals with temperature was determined and the thermal expansion coefficient was deduced to be 6.18×10-6 K-1. The results of the thermal expansion are fitted to polynomial expressions. It is found that the lattice parameter decreases quickly with temperature increasing at 298-330 K and then increases continuously up to 573 K. The minimum lattice parameter corresponds to a maximum shrinkage of 0.06%. The thermal expansion behavior of mercury indium telluride (MIT) crystals, Hg(3-3x)In2xTe3(x=0.5), based on X-ray diffraction experimental data is studied at 298-573 K. The variation of the lattice parameter of MIT crystals with temperature was determined and the thermal expansion coefficient was deduced to be 6.18×10-6 K-1. The results of the thermal expansion are fitted to polynomial expressions. It is found that the lattice parameter decreases quickly with temperature increasing at 298-330 K and then increases continuously up to 573 K. The minimum lattice parameter corresponds to a maximum shrinkage of 0.06%.
出处 《中国有色金属学会会刊:英文版》 CSCD 2009年第S3期776-779,共4页 Transactions of Nonferrous Metals Society of China
基金 Project(2007AA03Z442) supported by the National High-tech Research and Development Program of China Project(20090451374) supported by China Postdoctoral Science Foundation
关键词 MERCURY INDIUM TELLURIDE crystal growth XRD thermal EXPANSION semiconductor material mercury indium telluride crystal growth XRD thermal expansion semiconductor material
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参考文献15

  • 1HAILING T,SAUNDERS G A,LAMBSON W A.Elastic behaviour under pressure of the vacancy compounds. Physical Review B Condensed Matter and Materials Physics . 1982
  • 2WANG Ling-hang,DONG Yang-chun,JIE Wan-qi.Growth and electrical properties of mercury indium telluride single crystals. Materials Research Bulletin . 2007
  • 3WANG Ling-hang,DONG Yang-chun,JIE Wan-qi.Growth, structure and electrical properties of mercury indium telluride single crystals. Journal of Physics D Applied Physics . 2007
  • 4WEITZE D,LEUTE V.The phase diagrams of the quasibinary systems HgTe/In2Te3 and CdTe/In2Te3. Journal of Alloys and Compounds . 1996
  • 5WANG Ling-hang,JIE Wan-qi,ZHA Gang-qiang,XU Gang.Growth and characterization of mercury indium telluride single crystals. Journal of Materials Science . 2006
  • 6CHEN Gang,LIAO Li-ji.The fundamental of crystal physics. . 2007
  • 7J.C. Woolley,B. Ray.Effects of Solid Solutions of In2Te3 with AIIBVI Tellurides. Journal of Physics and Chemistry of Solids . 1960
  • 8SAUDERS G A,SEDDON T.The elastic behaviour of tetrahedral materials with vacant sites. Journal Physics Chemical Solids . 1976
  • 9L. Gastaldi,M. G. Simeone and S. Viticoli.Cation ordering and crystal structures in AGacompounds (CoGa CdGa CdGae HgGae HgGae. Solid State Communications . 1985
  • 10Spencer P M,Ray B.Phase Diagram of the Alloy System Hg3Te3-In2Te3. British Journal of Applied Physics . 1968

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