摘要
采用磁控溅射法,在Si和玻璃基片上制备了AZO(ZnO∶Al)透明导电薄膜。通过X射线衍射仪、紫外/可见光分光光度计、荧光光谱仪和四极探针等仪器,研究了Al质量分数对薄膜的微观结构和光电特性的影响。研究结果表明,AZO薄膜为纤锌矿结构且呈c轴择优取向,随着Al质量分数的增加,(002)衍射峰强度逐渐减弱;在掺Al质量分数小于4%时,薄膜在可见光范围内的平均透射率大于80%,方块电阻最小值达到514Ω/□,热稳定性小于20%;在室温下,观察到近带边发光峰和绿光发光带。
Al-doped ZnO(AZO)thin films were prepared on Si substrates and glass substrates by sputtering.The effects of Al content on structural,optical and electrical properties of AZO thin films were investigated by X-ray diffractometer,UV-VIS spectrophotometer,fluorescence spectrometer and four-point probe.It is found that the AZO thin films posses hexagonal wurtzite structure and have a preferential c-axis orientation,with increase of Al concentration,the peak intensity of the(002)plane is reduced.Under the 4% Al-doped film,the average transmittance of the visible light is above 80%,the minimum sheet resistance can be up to 514 Ω/□,the thermal stability is under 20%.At room temperature,PL spectrum of AZO films near band edge(NBE)emission and green light broad emission band are observed.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期319-322,共4页
Semiconductor Technology
基金
国家自然科学基金(10604041
10674133)
广东省自然科学基金
深圳市科技计划(200706)
关键词
磁控溅射
AZO薄膜
光电特性
sputtering
AZO thin film
optoelectronic properties
