摘要
采用磁控溅射法,通过ZnO陶瓷靶和Mg金属靶在石英衬底上制备了MgxZn1-xO薄膜。研究了Mg原子含量对MgxZn1-xO薄膜结构和光学性能的影响。XRD测试结果表明,MgxZn1-xO薄膜在(0002)方向有明显的c轴择优取向。随着Mg原子含量的提高,薄膜由六角单相转化为六角相和立方相的混合相。MgxZn1-xO合金薄膜的透射谱表明,薄膜的透射率略有下降,但在可见光区域的平均透射率仍大于85%,吸收边逐渐蓝移,最短的吸收边为283nm。能隙宽度图表明,MgxZn1-xO薄膜的能隙宽度从3.36eV增加到4.27eV。
MgxZn1-xO films were fabricated on quartz substrates at room temperature by magnetron sputtering method.The effect of the content of Mg atom on the structure and optical pro-perty of MgxZn1-xO thin films were studied.The XRD result indicates that the films have obvious c axis preferred orientation.With the content of Mg atom increasing,the structure of MgxZn1-xO thin films changes from hexagonal structure to cubic structure.The transmission spectra indicate that with the increasing of the content of Mg atom,the transmission drops appreciably while the average transmittance within the visible light area is above 85%.With the rising of the content of Mg atom,the absorb edge shift to high energy side and the shortest wavelength is 283 nm.The band gap curves indicate that the band gap of MgxZn1-xO films is changing from 3.36 eV to 4.27 eV.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期329-332,共4页
Semiconductor Technology
基金
国家自然科学基金(10604041
10674133)
广东省自然科学基金
深圳市科技计划项目(200706)
