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THERMODYNAMIC PROPERTIES OF HOLE TRAPS A AND B IN GaAs

THERMODYNAMIC PROPERTIES OF HOLE TRAPS A AND B IN GaAs
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摘要 Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions. Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions.
出处 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1992年第12期438-442,共5页 金属学报(英文版)
关键词 GAAS hole trap thermodynamic property GaAs hole trap thermodynamic property
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