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阈值可调的微机电惯性开关 被引量:2

MEMS inertial switch with threshold adjusting
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摘要 针对惯性开关通用性的要求,设计了一种具有阈值可调功能的微机电惯性开关。利用CoventorWare软件中的Architect模块对该悬臂梁结构开关进行系统级仿真。仿真结果表明,开关在半正弦加速度信号作用下,加速度阈值和电压基本呈线性关系,通过调整偏置电压的方式,可测量不同阈值加速度;以500g为一档,调节加速度阈值范围为1000~4000g,开关最长响应时间为63.44μs,接触时间无穷大,表现出良好的工作性能。考虑MEMS薄膜沉积工艺在加工4μm厚的悬臂梁时存在±0.1μm加工误差,应用蒙特卡洛法分析悬臂梁厚度在3.9~4.1μm之间变化时,对开关吸合电压和闭合时间的影响,结果表明,±0.1μm的加工误差对开关吸合电压和闭合时间影响在设计允许范围内。 In view of the versatility requirement of the inertial switch in fuze, a novel inertial switch with threshold adjusting is designed. The systemic model of the cantilever MEMS switch was established in CoventorWare(Architect module), and the static and the dynamic characteristic were studied based on the systemic model. The simulation results show that the acceleration threshold present an almost liner relationship with the changed bias voltage, and the acceleration threshold can be adjusted by adjusting the bias voltage of the switch. The acceleration threshold is controlled from 1000g to 4000g, adjusting 500g every time. The longest response time of the switch is 63.44μs, and the contact time is infinite, showing a higher trigger sensitivity and a favorable contact effect. The depth of the 4-micron-thick silicon cantilever would have ±0.1μm actual error during depositing process, so the Monte Carlo method was used to calculate the pull-in voltage and the performance of switch when the thickness of cantilever changed between 3.9~4.1μm during simulation moment. The simulation results show that the cantilever error is ±0.1 μm, whose influence on the switch’s pull-in voltage and the response time was within the design index.
出处 《中国惯性技术学报》 EI CSCD 北大核心 2014年第4期543-546,共4页 Journal of Chinese Inertial Technology
基金 辽宁省教育厅项目(L2013093) 沈阳理工大学兵器科学与技术重点实验室开放基金
关键词 MEMS 惯性开关 阈值可调 吸合电压 加工误差 MEMS inertial switch threshold adjusting pull-in voltage machining error
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参考文献7

  • 1Tsuchiya T,Funabashi H. A Z-axis differential capacitive SOI accelerometer with vertical comb electrodes[A].Maastricht,The Netherlands,2004.524-527.
  • 2Boga B,Ocak I E,Kulah H. Modeling of a capacitive S-A MEMS accelerometer system including the noise components and verification with test result[J].Micro Electro Mechanical Systems,2009.821-824.
  • 3Qian Keqiang,Luo Wen,Yu Qi. Research on electro-mechanical model of micro-accelerometer based on SOI technology[J].ASICON,2011.433-436.
  • 4刘双杰,郝永平.环形无源万向微机电惯性开关[J].中国惯性技术学报,2013,21(2):240-244. 被引量:3
  • 5王超,陈光焱,吴嘉丽.基于MEMS技术的低g值微惯性开关的设计与制作[J].传感技术学报,2011,24(5):653-657. 被引量:6
  • 6Bao M H,Huang Y P,Yang H. Reliable operation conditions of capacitive inertial sensor for step and shock signals[J].Sensors and Actuators,2004.41.
  • 7贾孟军,李昕欣,宋朝晖,王跃林.开关点电可调节的MEMS冲击加速度锁定开关[J].Journal of Semiconductors,2007,28(8):1295-1301. 被引量:13

二级参考文献18

共引文献19

同被引文献18

  • 1李旭辉.MEMS发展应用现状[J].传感器与微系统,2006,25(5):7-9. 被引量:38
  • 2曲利新.MEMS开关技术的研究与进展[J].现代电子技术,2008,31(1):147-149. 被引量:5
  • 3Wang Z,Yang Z,Xu Q,et al.Design,simulation and characterization of a MEMS inertia switch with flexible CNTs-Cu composite array layer between electrodes for prolonging contact time[J].J.Micromechanics Microengineering,2015,25:085012.
  • 4Chen W,Wang Y,Zhang Y,et al.Fabrication of a novel contact-enhanced horizontal sensitive inertial micro-switch with electroplating nickel[J].Microelectron.Eng.,2014,127:21-27.
  • 5Chen W,Wang Y,Zhu B,et al.A laterally-driven micromachined inertial switch with a compliant cantilever beam as the stationary electrode for prolonging contact time[J].J.Micromechanics Microengineering,2014,24:065020.
  • 6Du L,Zhao M,Wang A,et al.Fabrication of novel MEMS inertial switch with six layers on a metal substrate[J].Microsyst.Technol.,2015,21:2025-2032.
  • 7Guo Z,Yan G.Design,fabrication and characterization of a latching acceleration switch with multi-contacts independent to the proof-mass[J].Sensors Actuators A Phys.,2011,166:187-192.
  • 8Kim H.MEMS acceleration switch with bi-directionally tunable threshold[J].Sensors Actuators A Phys.,2014,28:120-129.
  • 9Currano L J.Triaxial inertial switch with multiple thresholds and resistive ladder readout[J].Sensors Actuators A Phys.,2013,195:191-197.
  • 10Xiong Z,Zhang F,Pu Y,et al.Silicon-based,low-g microelectromechanical systems inertial switch for linear acceleration sensing application[J].Micro Nano Lett.,2015,10(7):347-350.

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