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散射场展开项中截断系数N取值的考虑 被引量:1

Considering the Value of the Truncation Index N in the Extended Repressions of the Scattered Field
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摘要 本文讨论了用T矩阵求解散射场时,散射场展开项截断系数n取值的问题。取值的原则是既要保证T矩阵方法的计算精度也要保证计算的收敛性。 In this paper, we will discuss the value of the truncation index N in the extended repressions of the scattered field when we solve the scattered field by T-matrix. The principle which will decide the value of the truncation index N not only insures the computing precision for T-matrix method but also ensures the computing convergence.
出处 《光散射学报》 2004年第2期159-162,共4页 The Journal of Light Scattering
关键词 表面缺陷 T矩阵 球矢量波函数 截断系数 计算精度 surface defects T-matrix spherical vector wave functions truncation index computing precision
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参考文献7

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  • 1林晓春,向健勇,郭艳艳,葛启东.若干特殊函数在T矩阵求解散射场时的编程实现[J].光散射学报,2004,16(2):153-158. 被引量:1
  • 2Nebeker B M, Starr G W, Hirleman E D. Evaluation of Iteration Methods Used When Modeling Scattering from Features on Surfaces Using the Discrete-Dipole Approximation[J]. Journal of Quantitative Spectroscopy and Radiative Transfer, 1998, 60(3): 493-499.
  • 3Guo Runqiu ,Lin Xiaochun. Research for the automatic control system of the high precision turn table[J]. ICEMT2001 2001,Vol.15,No.11, p.117-120
  • 4Waterman P C. New formulation of acoustic scattering [J]. Acoust. Soc. Am., 1969, 45: 1417-1429.
  • 5Jung Hyeun Kim, Ehrman Sheryl H, Mulholland George W, et al. Polarized light scattering by dielectric and metallic spheres on silicon wafers[J]. Appl. Opt, 2002, 41(25): 5405-5412.
  • 6Videen Gorden. Light scattering from a sphere on or near a surface[J]. Opt. Soc. Am., 1991,8(3): 483-489.
  • 7Stan Stokowski, Mehdi Vaez-Irvani. Wafer Inspection Technology Challenges for ULSI Manufacturing[J]. Yield Management solutions, 1999, 2(1): 15-19..
  • 8过润秋,林晓春,鲍建跃.基于模糊控制的自动回转控制系统[J].西安电子科技大学学报,1999,26(4):416-419. 被引量:6
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