摘要
还原制备了基于RAINBOW结构的反铁电陶瓷,给出了试样还原层微观结构及其还原规律;测试了试样的驱动性能并讨论了影响因素。研究结果表明:反铁电陶瓷还原性能较好,理想的还原条件为870℃保温2～3h;RAINBOW试样在相对较低的电场强度下即可发生反铁电 铁电相变,并得到很大的轴向位移(约190μm);承载方向对试样的驱动性能具有决定性的影响。
Anti-ferroelectrics PSZT based on RAINBOW (reduced and internally biased oxide wafer) structure was manufactured by chemical reduction. The microstructure of reduced layer in RAINBOW samples and the reduction law were presented. Actuating properties of samples were measured and the influence factors were also discussed. It was found that PSZT was easily reduced and the optimal conditions for producing RAINBOW samples were determined to be 870°C for 2-3 h. The AFE-FE phase transitions occur at lower field strength in RAINBOW samples compared with normal PSZT. Larger axial displacement (about 190 μm) was obtained from RAINBOW samples by application of electric fields exceeding the phase switching level. The field-induced displacement of samples is dependent on the direction of applying load.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第4期480-482,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50135030)
航空基础科学基金资助项目(99G52065)
关键词
反铁电陶瓷
RAINBOW
驱动器
驱动性能
大位移
Actuators
Antiferroelectricity
Crystal microstructure
Electric field effects
Ferroelectricity
Lead compounds
Multilayers
Phase transitions
Reduction
Tin compounds
Titanium compounds
Zirconium compounds
