摘要
提出了在 n- 区中采用掺杂浓度三层渐变式结构 Si Ge/Si功率二极管及台面结构的 Si Ge/Si功率二极管。由 Medici模拟所得的特性表明 ,在采用 n- 区渐变掺杂结构的 p+ ( Si Ge) -n- -n+ 功率二极管中 ,在正向特性基本不发生变化的前提下 ,与 n-区固定掺杂结构相比反向恢复过程加快 ,二极管下降时间 t A 缩短近 1 /2 ;在采用台面结构的 p+ ( Si Gi) -n- -n+功率二极管中 ,反向恢复特性也有明显改进 ,电流反向恢复时间缩短近 1 /3 ,而电压反向恢复时间缩短近 1 /2。
Two kinds of p +(Si 1-xGe x)-n --n + power diode with novel structure are proposed in this paper,one is with gradual doping n --region,and the other is with mesa structure.The device characteristics were simulated by Medici.From the results,it can be shown that the reverse recovery characteristics of the device are much improved than the constant doping structure,which enables the device to finish its turn-off t A process within a half shorter period.The reverse recovery characteristics are also improved for mesa structure,that is,the recovery time for current reversing shorten by and a that for voltage reversing shorten by half.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第2期168-172,228,共6页
Research & Progress of SSE
基金
信息产业部 2 0 0 1年信息产业科研试制项目 ( 0 1XK610 0 12 )
