摘要
用常压MOCVD在蓝宝石 (0 0 0 1)面上生长了氧化锌 (ZnO)薄膜。用AFM、室温PL谱、Hall测量、X射线双晶衍射、卢瑟福背散射 /沟道技术等分析方法研究了样品的表面形貌、结构性能、发光性能和电学性能。AFM分析结果显示 ,薄膜呈六角柱状结晶 ,表面平整 ,粗糙度 (RMS)为 6 .2 5 7nm ,平均晶粒直径达 1.895 μm。室温PL测量该样品在 380nm处有很强的近带边发射 ,半峰全宽为 15nm。使用Hall测量检查了薄膜的电学性质。室温下该样品的载流子浓度为 2× 10 17cm-3 ,迁移率为 75cm2 ·V-1·s-1。用X射线双晶衍射和卢瑟福背散射 /沟道效应研究了薄膜的结晶质量 ,样品的双晶衍射ω扫描半峰全宽为 0 .0 4° ,沟道效应的最小产额比χmin为 3.1%。
ZnO films were grown on sapphire substrate (0001) plane by atmospheric MOCVD. Surface mor-phology, crystalline quality, PL and electrical properties of the films were studied using AFM, DXRD, RBS/C, photoluminescence and Hall measurements. A columnar structure with an average column size of 1.89 μm in diameter and a RMS of 6.257 nm of the sample was observed by AFM measurement. The sample shows strong near-band edge emission at 380 nm in PL spectra at room temperature, FWHM of the peak is 15 nm, no deep level emission was observed. The electrical properties of the samples were measured by Hall measurements at room temperature. The carrier concentration and mobility are 2×10^(17) cm^(-3) and 75 cm^2·V^(-1)·s^(-1), respectively. Double-crystal X-ray diffraction and Rutherford backscattering/channel (RBS/C) analysis were used to check the crystalline quality of the film, FWHM of the DXRD rocking curve (omega-scan) is 0.04°, and the RBS/C minimum yield χ_(min) of the film is 3.1 %. Both these results indicate that the ZnO film has a good crystalline quality.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2004年第4期393-395,i001,共4页
Chinese Journal of Luminescence
基金
国家"8 63"计划 ( 2 0 0 3AA3 0 2 160 )
电子发展基金资助项目
