摘要
为了锰铜传感器微型化,采用直流磁控溅射法制备适合高压力测量的锰铜薄膜,用X射线衍射和扫描电子显微镜技术分析了薄膜的结构和形貌,动态加载实验标定了锰铜薄膜的压阻系数。研究结果表明,晶粒尺寸决定了薄膜的压阻系数,经360℃热处理1h后,薄膜晶粒长大,压阻系数有着明显提高(K值达到0.02GPa–1),性能达到锰铜箔的水平。
For sensor of manganin microminiaturization, manganin thin films aimed at high-pressure measurement were prepared by DC magnetron sputtering. The structure and morphology of the films were analysed by XRD and SEM technique. The piezoresistance coefficient K is abtained through dynamic calibration. The experimental result shows that K depends on grain size of films. It is found that heat treatment at 360℃, 1 h is helpful for the growth of larger size grains, and improves K of the films (0.02 GPa–1). The value of K is equal to that of the foil-like.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第9期3-5,共3页
Electronic Components And Materials
基金
军事电子预研基金资助项目(AW030412)
关键词
锰铜薄膜
X射线衍射
扫描电镜
压阻系数
electronic technology
manganin
thin films
XRD, SEM
piezoresistance coefficient
