摘要
采用NH3为N源,以Ga2O3粉末为Ga源高温氨化形成GaN粉末。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对粉末进行结构、形貌分析。结果表明:当Ga源温度为850℃时得到六方纤锌矿结构的GaN晶体颗粒。
Gallium nitride (GaN) powder have been successfully synthesized by ammoniating Ga2O3 under high temperature using ammonia as N source and Ga2O3 powder as Ga source. The produced powder structure, surface morphology were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and selected area electron diffraction (SAED) in this study. The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850 degreesC.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2004年第8期861-863,共3页
Rare Metal Materials and Engineering
基金
国家自然科学基金资助项目(90201025
60071006)
关键词
氨化
GaN晶粒
Ga源温度
ammoniating
GaN particles
Ga source temperature
