摘要
由于等离子体在低温下具有高活性的特点 ,等离子体增强化学气相沉积 (PECVD)技术可显著降低薄膜沉积的温度范围。通常条件下 ,高质量碳纳米管的生长要求 80 0℃以上的基片温度 ,若能使该温度降到4 0 0℃以下 ,则对许多应用非常有利 ,如可以在玻璃基片上沉积碳纳米管场发射电极。目前 ,碳纳米管基纳电子器件的研制这一课题备受关注 ,如果能实现低温原位制备碳纳米管 ,则可能将纳电子器件与传统的微电子加工工艺结合并实现超大容量的超大规模集成电路。本文主要介绍近年来生长碳纳米管所采用的各种等离子体化学气相沉积技术 。
Because of plasma's high activity at low temperature, plasma enhanced chemical vapor deposition (PECVD) technique has been used to deposit thin films at considerably low substrate temperature. Generally, high quality carbon nanotube(CNT)'s growth requires a substrate temperature higher than 800℃. If the temperature could be lower than 400℃, it will be beneficial to many applications, eg., to deposit CNT emitter on glass substrates for FED (field emission display) devices. Nowadays, CNTs based on electronic devices have attracted much attention. If a low temperature in-situ growth of CNT could be realized, the combination of nano-devices with traditional process of microelectronic device will be able to realize a ultra-high capacity and ultra large scale integrated circuit (ULSI). Some PECVD techniques used to synthesize CNT at low temperature have been reviewed with some key factors of the synthesis process discussed.
出处
《真空》
CAS
北大核心
2004年第4期40-46,共7页
Vacuum
