摘要
采用可溶性无机盐 Sr( NO3) 2 ,Bi( NO3) 3及 HTa F6 为原料 ,以柠檬酸、乙二醇及乙二胺四乙酸( EDTA)为络合剂 ,利用溶胶 -凝胶旋转涂覆工艺 ,分别在 Al2 O3和 Pt/Ti/Si O2 /Si的衬底上制备了Sr Bi2 Ta2 O9( SBT)铁电陶瓷薄膜 .采用 SEM,XRD及 FTIR等微观分析手段 ,对制备的 SBT溶胶与薄膜过程机理进行了实验研究 .结果表明 ,由无机盐溶液原料络合合成 SBT溶胶是此方法制膜的关键 ,其中络合剂的种类、用量和 p H值的控制等是重要的影响因素 .制备了相组成均一、薄膜表面致密、均匀、无开裂、晶粒尺寸为 1 5 0 nm的多晶膜 ,获得了剩余极化 ( 2 Pr)与矫顽电场强度 ( 2 Ec)分别为 9.6μC/cm2 与 76k V/cm铁电性能较好的薄膜材料 .
Strontium bismuth tantalate(SBT) and ferroelectric thin films were prepared by a novel sol-gel method on Al 2O 3 and Pt/Ti//SiO 2/Si substrates by using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the sol precursors, and citric acid-ethylene glycol-ethylenediaminetetraacetic acid(EDTA) as the chelating agents. The structure characterization of the sol and as-grown SBT thin films by FTIR, XRD and SEM revealed that the factors such as kind and content of chelating agents and pH value played a key role in the preparing process. The results show that the polycrystalline films with a single orthorhombic-phase are density, homogeneity and crack-free, and average grain size of 150 nm at 750 ℃ for 40 min in oxygen atmosphere. The ferroelectrics properties of thin films are obtained that remnant polarization(2P r) and coercive field(2E c) are 9.6 μC/cm2 and 76 kV/cm, respectively.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第9期1613-1616,共4页
Chemical Journal of Chinese Universities
基金
国家自然科学基金重大项目 (批准号 :5 9995 5 2 0 )资助
